FLOWABLE CVD PDF

The Producer Eterna flowable CVD (FCVD) tool provides a bottoms up, void-free fill in memory and logic designs at nm and below. Low k C-doped oxide (kflowable chemical vapor deposition (FCVD) reactor for W inter-metallic dielectrics (TMD). Quantitative Electron Energy Loss Spectroscopy (EELS) Analysis of Flowable CVD. Oxide for Shallow Trench Isolation of finFET Integration. J. Li1, J. Bruley2.

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Applied Materials Enables Advanced Microchip Designs with Breakthrough Flowable CVD Technology

Exemplary linear alkyl groups include, but are not limited to, methyl, ethyl, propyl, butyl, pentyl, and hexyl groups. A silicon-containing film precursor comprising at least one silicon-containing compound is selected from the group consisting of: After curing the flowable liquid oligomer forms a solid carbon doped porous OSG The silicon-containing film is selected from the group consisting of a silicon nitride, a flodable carbide, a silicon oxide, a carbon-doped silicon nitride, a silicon oxynitride, and a carbon-doped silicon oxynitride film.

In one embodiment of the invention, a composition comprises the inventive silicon containing precursor and at least one of the oxygen or nitrogen containing source.

In these or other embodiments, the substrate comprises a semiconductor substrate comprising a surface feature.

Flowable CVD Process Application for Gap Fill at Advanced Technology

In some case, the vaporized precursors can pass through a plasma generator. Flowavle and system are described for improving quality of the dielectric film morphologically adapted over various device structures.

Typical film thickness ranged from 10 to nm. In another embodiment of the invention, a composition comprises an oligomer obtained from the inventive precursor and at least one of oxygen or nitrogen containing source.

Design Guidelines of In 0. Other flowagle and advantages of the present invention will be apparent from the following more detailed description of the preferred embodiment, taken in conjunction with the accompanying drawings which illustrate, by way of example, the principles of the invention.

Press and information Press releases Press Archives. The above steps define one cycle for the methods described foowable and the cycle can be repeated until the desired thickness of a silicon-containing film is obtained.

Examples of compounds of Formula I a include diacetoxydimethylsilane, diacetoxymethylsilane, triacetoxymethylsilane, diacetoxydivinylsilane, diacetoxymethylvinylsilane, triacetoxyvinylsilane, diacetoxydiethynylsilane, diacetoxymehylethynylsilane, and triacetoxyethynylsilane.

Electrochemical SocietyPennington; Such methods are well described in the prior art and, may include, but are not limited dlowable purification processes such as distillation, or adsorption. Since there are two acetoxy groups on each silicon atom, the cross-linking formation leads to long chains.

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Flowable CVD Process Application for Gap Fill at Advanced – Technische Informationsbibliothek (TIB)

The method of claim 4 further comprising the step of exposing the hardened layer to energy selected from the group consisting of a plasma, infrared light, chemical treatment, an electron beam, or UV light to form the final silicon-containing film. Thus, certain embodiments of the present development are applied to perform further treatment of the as-deposited silicon oxide layer to improve film quality with increased density and still achieve a void free gap fill.

Substrates may further comprise a variety of layers to which the film is applied thereto such as, for example, antireflective coatings, photoresists, organic polymers, porous organic and inorganic materials, metals such as copper and aluminum, or diffusion barrier layers, e. In this work, we report the application of flowable chemical vapor deposition FCVD technology in subnm devices and flash devices. The present invention is directed to semiconductor thin vvd process techniques.

In embodiments wherein the silicon-containing precursor comprises a compound having Formula I bexamples of precursors include the following: The loss of an acetic anhydride molecule leads to the creation and nanoscale pores. Examples of compounds of Formula I B include diacetoxymethoxymethylsilane, diacetoxydimethoxysilane, and triacetoxymethoxysilane. Referring now to FIG. Adsorbents such as, for example, commercially available MgO—Al 2 O 3 blends can be used to remove halides such as chloride.

With the processing pressure at 8 Torr, the modulus of the film was In addition, the shelf-life or stability is negatively impacted by the higher degradation rate of the silicon precursors thereby making it difficult to guarantee a year shelf-life. Described herein is a process for the fabrication of an electronic device. A method for depositing a silicon-containing film, the method comprising: Another aspect of the invention relates to a precursor composition comprising at least one silicon-containing compound having at least one acetoxy group, wherein the at least one silicon-containing compound is selected from the group consisting of: For example, the prior art has focused on using compounds such as trisilylamine TSA to deposit Si, H, N containing oligomers that are subsequently oxidized to SiOx films using ozone exposure.

Examples of compounds of Formula I c include diacetoxydimethylaminoxymethylsilane, diacetoxydi methylethyl aminoxymethylsilane, and diacetoxydiethylaminoxymethylsilane. Reading desks and facilities Computer workstations Printing — photocopying — scanning Wireless LAN Interactive whiteboards Study cubicles Workstation for the blind and visually impaired.

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In one particular embodiment, the plasma is selected from but not limited to the group consisting of a nitrogen plasma; plasma comprising nitrogen and helium; a plasma comprising nitrogen and argon; an ammonia plasma; a plasma comprising ammonia and helium; a plasma comprising ammonia and argon; helium plasma; argon plasma; hydrogen plasma; a plasma comprising hydrogen and helium; a plasma comprising hydrogen and argon; a plasma comprising ammonia and hydrogen; an organic amine plasma; a plasma comprising oxygen; a plasma comprising oxygen and hydrogen, and mixtures thereof.

In certain embodiments, any one or more of substituents R 1R 2and R 3 in the formulae described above can be linked with a C—C bond in the above formula to form a ring structure when they are not hydrogen. Regarding the processes that employ trisilylamine TSATSA is typically delivered into the reaction chamber as a gas, mixed with ammonia, and activated in a remote plasma reactor to generate NH 2NH, H and or N radicals or ions.

The flowable film is formed by reacting a dielectric precursor which may have a Si—C bond with an oxidant to form the dielectric material. The following examples are provided for the purpose of further illustrating the present invention but are by no means intended to limit the same.

Flowable CVD Process Application for Gap Fill at Advanced Technology

Tips for Longer Dressing Life. After curing the flowable liquid oligomer forms a solid carbon doped porous OSG.

Accordingly, in one aspect, the present development provides a method for depositing a silicon-containing film, the method comprising: The TSA reacts with the plasma activated ammonia and begins to oligomerize to form higher molecular weight TSA dimers and trimers or other species which contain Si, N and H.

The chamber has direct liquid injection DLI delivery capability. Chlorides or metal ions are known to act as decomposition catalysts for silicon precursors. In a similar manner, the synthesis should fflowable use halide based solvents, catalysts, or solvents which contain unacceptably high levels of halide contamination.