STYLE 2. See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION. SCRs. CD THYRISTOR SCR 4A V TOAA ON Semiconductor datasheet pdf data sheet FREE from Datasheet (data sheet) search for. CD Sensitive Gate Silicon Controlled Rectifier, Package: TO, Pins=3. Glassivated PNPN devices designed for high volume consumer applications such.

Author: Yoshakar Mazulrajas
Country: Rwanda
Language: English (Spanish)
Genre: Sex
Published (Last): 24 October 2006
Pages: 163
PDF File Size: 4.72 Mb
ePub File Size: 3.3 Mb
ISBN: 343-1-84911-876-9
Downloads: 70364
Price: Free* [*Free Regsitration Required]
Uploader: Dirisar

Thank you for your reply sir. ASCRs are used where either a reverse conducting diode is applied in parallel for example, in voltage-source inverters or where reverse voltage would never occur for example, in switching power supplies or DC traction choppers.

C106 Datasheet, Equivalent, Cross Reference Search

Message 3 of 6. For further assistance daatasheet the new web based request system, click here. The planar construction is used for low-power SCRs and all the junctions are diffused. SCRs are mainly used in devices where the control of high power, possibly coupled with high voltage, is demanded.

Product Categories | Thyristor | New Jersey Semiconductor

Anodegate and cathode. Proceedings of the IRE. This is known as avalanche breakdown, during which junction J2 will break down.

It typically has a reverse breakdown rating in the tens of volts. Message 2 of 6. Auto-suggest helps you quickly narrow down your search results by suggesting possible matches as you type. By continuing to use our website, you agree with our use of cookies in accordance with our Cookie Policy.

With regard to the Component Wizard, in Step 6 you can simply paste the model. I have downloaded Multisim and it is great simulator I have ever found. Cd is the component I required in C series.


Mark it as solved. SCRs are available with reverse blocking capability, which adds to the forward voltage drop because of the need to have a long, low-doped P1 region.

If one cannot determine which region is P1, a labeled diagram of layers and junctions can help. Solid state switches Power electronics Rectifiers General Electric inventions introductions in technology.

You are logged in as:: Their operation makes them suitable for use in medium- to high-voltage AC power control applications, such as lamp dimmingpower regulators and motor control. Here are the instructions how to enable JavaScript in your web browser. TRIACs have three leads: Some sources define silicon-controlled rectifiers and thyristors as synonymous, [5] other sources define silicon-controlled rectifiers as a proper subset of the set of thyristors, those being devices with at least four layers of alternating n- and p-type material.

The anode terminal of an SCR is connected to the p-type datasbeet of a PNPN structure, ecr the cathode terminal is connected to the n-type layer, while the gate of the SCR is connected to the p-type material nearest to the cathode. An SCR consists of four layers of alternating p- and n-type semiconductor materials. It is properly braced with tungsten or molybdenum plates to provide greater mechanical strength. I have attached datasheet. This is the reverse blocking mode.

Retrieved 12 April It is used as switch in various devices. One of these plates is hard-soldered to a copper stud, which is threaded for attachment of a heat sink. SCRs and similar devices are used for rectification of high-power AC in high-voltage dc power transmission.

Retrieved from ” https: The typical application for a reverse blocking SCR is in current-source inverters. Message 4 of 6. In this case, junction J2 is obtained by the diffusion method, and then the outer two layers are alloyed to datzsheet, since the PNPN pellet is required to handle large currents.


But multisim is one of the best and I have stood with it for entire my life. The junctions are either diffused or alloyed alloy is c106e mixed semiconductor or a mixed metal. The image for is currently unavailable. Even I used circuitlogix, proteus, altium, circuitmaker If the reverse voltage is increased, then at critical breakdown level, ecr the reverse breakdown voltage V BRan avalanche occurs at J1 and J3 and the reverse current increases scg.

In this case junction J1 and J3 are forward-biased, while J2 is reverse-biased, due to which only a small leakage current exists from the anode to the cathode until the applied voltage reaches its breakover value, at which J2 undergoes avalanche breakdown, and at this breakover voltage it starts conducting, but below breakover voltage it offers very high resistance to the current and is said to be in the off state. How can we help you?

Silicon controlled rectifier

First time users please use the quick and easy one time website registration. The principle of four-layer p—n—p—n switching was developed by Moll, Tanenbaum, Goldey and Holonyak of Bell Laboratories in This page was last edited on 6 Decemberat Thank you for your help sir. SCRs are unidirectional devices i. I recommend you to read in detail the datasheet to double c106f that this component will fit your application.