Full text of “IC Datasheet: EPROM” Jameco Part Number M NMOS Kbit (32Kb x 8) UV EPROM NOT FOR NEW DESIGN □ FAST. datasheet, pdf, data sheet, datasheet, data sheet, pdf, General NMOS K 32K x 8 UV EPROM Others with the same file for datasheet. (EPROM). The device is organized as 32K words by 8 bits (32K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin.
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Programming reliability is also ensured as the incremental program margin of each byte is continually monitored to determine when it has been successfully programmed. This publication supersedes and replaces all information previously supplied. Research shows that constant exposure to room level fluorescent lighting could erase a typical M in about 3 years, while it would take approximately 1 week to cause erasure when exposed to direct sunlight.
It is organized as Program Verify A verify should be performed on the programmed bits to determine that they were correctly pro- grammed.
eprom datasheet & applicatoin notes – Datasheet Archive
Search the history of over billion web pages on the Internet. The duration of the initial E pulse s is 1 ms, which will dataxheet be followed by a longer over- program pulse of length 3ms by n n is equal to the number of the initial one millisecond pulses applied Table 3.
Data is introduced by selectively programming “Os” into the desired bit locations. The only way to change 22756 “0” to a “1 ” is by ultraviolet light erasure.
It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the A range. This mode is intended for use eptom programming equipment for the purpose of automatically matching the device to be programmed with its corresponding programming algorithm. When in the standby mode, the outputs are in a high impedance state, independent of the G input.
27256 – 27256 256K EPROM Datasheet
Except for dtasheet rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute Maximum Ratings” may cause permanent damage to the device.
In addition, a 4. However, STMicroeiectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. The data to be pro- grammed is applied 8 bits in parallel to the data output pins.
Some lamps have a filter on their tubes which should be re- moved before erasure. The purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of RGB traces.
Although only “Os” will be programmed, both “1 s” and “Os” can datasheey present in the data word. If the M is to be exposed to these types of lighting conditions for extended periods of time, it is suggested that opaque lables be put over the M window to prevent unintentional erasure.
The integrated dose i.
Two Line Output Control Because EPROMs are usually used in larger mem- ory arrays, this product features a 2 line 22756 function which accommodates the use of multiple memory connection.
No license is granted by implication or otherwise under any patent or patent rights of STMicroeiectronics.
A high level E input inhibits the other Ms from being programmed. The M should be placed within 2. Program Inhibit Programming of multiple Ms in parallel with different data is also easily accojnplished. Specifications mentioned in this publication are subject to change without notice.
Datasheet pdf – K (32k x 8) Bit NMOS UV Erasable PROM – General Semiconductor
The Fast Programming Algorithm utilizes two different pulse types: The length of the Over-program Pulse varies from 2. F ceramic capacitor be used on every device between Vcc and Vss- This should be a 27526 frequency capacitor of low inherent inductance and should be placed as close to the device as possible.
The associated transient voltage peaks can be sup- pressed by complying with the two line output control and by properly selected decoupling ca- pacitors.
It epom recommended that a 1 j.
When parallel programming several devices which share the common bus, Vpp should be lowered to Vcc 6V and the normal read mode used to exe- cute a program verify. All other address lines must be held at Vil during Electronic Signature mode. The recommended erasure procedure for the M is exposure to short vyave ultraviolet light which has wavelength A.
Standby Mode The M has a standby mode which reduces the maximum active power current from mA to 40mA. Output Enable G is the output control and should be used to gate data to the output pins, inde- pendent of device selection. The levels required forthe address and data inputs are TTL. Assuming that the addresses are stable, address access time tflivov is equal to the delay from E to output tELOv.
Except for E, all like inputs including G of the parallel M may be common. Full text of ” IC Datasheet: Data s available at the ojjtputs after the falling edge of G, assuming that E has been low and the ad- dresses have been stable for at least tAvav-tcLov.
Vcc must be applied simultaneously with or before Vpp and removed simultaneously or after Vpp. The M is in the programming mode when Vpp input is at 1 2.
A single 5V power supply is required in the read mode. STIVIicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroeiectronics. For further information on any aspect of this device, please contact STMicroelectronics Sales Office nearest to you.
Chip Enable E is the power control and should be used for device selection.